E. Goldenberg1, L. Colakerol Arslan2, K. B. Sonmez1, S. Celik1, O. Alev2, O. Ozdemir3

1) Sabancı University Nanotechnology Research and Application Center SUNUM, 34956 Istanbul, Turkey

2) Department of Physics, Gebze Technical University, 41400 Kocaeli, Turkey

3) Nanotechnology Institute, Gebze Technical University, 41400 Kocaeli, Turkey

Tungsten disulfide (WS2) is one of the most studied materials among several transition metals dichalcogenides due to their excellent properties in diverse applications such as nanoelectronics, energy storage and photonics. In the present work, we explain the variation of the film material properties in terms of film stoichiometry, crystallinity and possible interactions at the film-substrate interface. Well-adhered, uniform and amorphous films were grown by sputtering using different plasma power and pressure regimes. Compositional analysis of tungsten and sulfur compounds which was determined by XPS indicates that as-deposited films were sulfur deficient and contained tungsten oxysulfides. The deposition of the films under higher pressure leads to rougher surfaces. The optical transmission was between 20-65% as a function of plasma power and deposition pressure. Raman spectra of the films indicated two prominent modes:E12g (∼381 cm−1 ) and A1g (∼417 cm−1) due to in-plane and out-of-plane vibration modes, respectively.