B. Ahammou1,2, A. Abdelal2, D. Laillé3, C. Levallois3, J. P. Landesman1 and P. Mascher2

1) University of Rennes1

2) McMaster University

3) INSA Rennes

This work presents a novel approach to evaluate Young's modulus of dielectric thin films based on micro-beam buckling. Amorphous silicon nitride thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) with different levels of compressive stress from -98MPa to -360MPa. The fabrication and the characterization of the microbeams will be discussed. The microstructures were defined by a reactive ion etching of a-SiN films and subsequently released from the silicon substrate using a standard wet etching process. The deflection profiles of the microbeams were measured using a confocal microscope. We will discuss the analytical relationship between the residual stress of the film and the released shape of a doubly clamped microbeam. Finally, the estimated Young’s moduli will be compared to nanoindentation measurements and we will discuss the reasons why the comparisons are not in agreement.