Date & Time
Tuesday, June 15, 2021, 1:50 PM - 2:00 PM
Characterization of silicon nitride thin films deposited by PECVD using microstructures
FCSE Session Type
Session 4: Advanced plasma-based processes for functional coatings II

B. Ahammou1,2, A. Abdelal2, D. Laillé3, C. Levallois3, J. P. Landesman1 and P. Mascher2

1) University of Rennes1

2) McMaster University

3) INSA Rennes

This work presents a novel approach to evaluate Young's modulus of dielectric thin films based on micro-beam buckling. Amorphous silicon nitride thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) with different levels of compressive stress from -98MPa to -360MPa. The fabrication and the characterization of the microbeams will be discussed. The microstructures were defined by a reactive ion etching of a-SiN films and subsequently released from the silicon substrate using a standard wet etching process. The deflection profiles of the microbeams were measured using a confocal microscope. We will discuss the analytical relationship between the residual stress of the film and the released shape of a doubly clamped microbeam. Finally, the estimated Young’s moduli will be compared to nanoindentation measurements and we will discuss the reasons why the comparisons are not in agreement.