P1-15 Effects of the HiPIMS pulse length and target power density on deposition processes of the W and WOx films
FCSE Session Type
Poster Session I: Process and Coating Performance

N.S. Sergeev1,2, A.V. Kaziev2, D.V. Kolodko2

1) NRC “Kurchatov Institute”, Ploshchad' Akademika Kurchatova, 1, Moscow, Russia, 123098
2) National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe shosse, 115409 Moscow, Russia

Tungsten based films including oxides are approved for many practical applications, such as part of electrochromic or gasochromic devices, and as the active layer of hydrogen gas sensors. Moreover, tungsten films with various stoichiometric characteristics play an essential role in fusion relevant research. The aim of this study is to investigate the operation domain for the HiPIMS deposition processes of the W and WOx thin films in wide range of the target power density Pt = 100-3000 Wcm-2 and different percent of Ar/O2 in gas mixture. In order to do so, the absolute values of the ion flux to the substrate are measured by the combination of the mass-separator analyzer and electric probe. Results of the measurements demonstrates a non-linear dynamics of the ion species peak current present in the discharge depending on the discharge power. Such behaviour strongly affects the film stoichiometric properties.