Adil Driouach, P.V. Ashrit

Thin Films and Photonics Research Group (GCMP), Université de Moncton, Canada

Indium doped tin oxide (ITO) films are the most commonly used transparent conductors in a wide variety of devices. However, they are not compatible as integrated thin film resistors for use with Vanadium dioxide (VO2) based thermochromic devices, as switching in these films occurs in the near infrared region where invariably the ITO films are not transparent. To integrate the ITO films in tandem with the VO2 films, the properties of ITO films need to be tailored to widen their spectral region of transmittance. Here we have studied the film thickness dependence of the optical and electrical properties of sputter deposited ITO films to optimize them for use with VO2 based devices. All the parameters related to the transparent conducting behaviour of these films are obtained and compared to the typical ITO films used in other devices. The advantages of the using these functionalized ITOs in thermochromic devices is underlined.