H. Hernández-Florez1, C. J. Diliegros-Godines2 y F. Pérez-Rodríguez3
1) Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apdo. Post. J-48, Puebla, Pue. 72570, México.
2) Tecnologico de Monterrey, Av. Atlixcayotl 5718, Reserva Territorial Atlixcáyotl, 72453 Puebla, Pue.
3) Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apdo. Post. J-48, Puebla, Pue. 72570, México.
In this work, we show the inclusion of an Antireflective coating (ARC) of metal-dielectric stack within a CdS/CdTe photovoltaic. We perform theoretical calculations and analysis of the reflectance and transmittance spectra varying the number of bi-layers and thickness using the methodology of transfer matrix and expansion into bulk modes. Results show the relevance of the parameters in the layer design to control the electromagnetic wave propagation. The effective permittivity tensor and the individual properties of each layer of the ARC were used to compute the total reflectance of the device and then estimate the device efficiency with and without ARC. The device studied in this work was in the form Glass/ARC/Cd2SnO4/CdS/CdTe, where the electrical and optical properties of the Cd2SnO4, CdS and CdTe layer were obtained from experimental materials. The calculations shown an improvement of 0.5 to 1 % of efficiency using an ARC in the device structure.