P2-8 Synthesis and Characterization of Cd1-XZnXS Thin Films Deposited by Laser Ablation Technique
FCSE Session Type
Poster Session II: Film Nanostructures - Optical and Functional properties

C. Vázquez-Morales1, M.A. Hernández-Pérez1, J.R. Aguilar-Hernández2, L.A. Martínez-Ara3

1) Instituto Politécnico Nacional, Departamento de Ingeniería en Metalurgia y Materiales, ESIQIE, C.P. 07738 CDMX, México
2) Instituto Politécnico Nacional, Escuela Superior de Física y Mtaemáticas, Edificio 9, U.P.A.L.M., San Pedro Zacatenco, C.P. 07738, CDMX, México
3) Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Av. Instituto Politécnico 2508, San Pedro Zacatenco, Gustavo A. Madero, CDMX,C.P. 07360, México

Cd1-XZnXS thin films were deposited on glass substrates using the laser ablation technique. The thin films were deposited at 400 °C for 20 minutes by employing a Nd:YAG laser with a wavelength of 1064 nm. Five ablation targets were prepared by mixing and pressing CdS and ZnS powders with different ratios to vary the composition from X=0 to X=1, passing through the intermediate compositions 0.25, 0.5, and 0.75. The samples were characterized by X-ray diffraction, SEM-EDS and UV-vis spectrometry which was employed to determine the band gap of the films. All films are conformed by individual nanoparticles and present a hexagonal structure, solid solution was identified to the intermediate compositions. The band gap values registered range from 2.42 to 3.53 eV according to X value increment.